SLF7N80C Datasheet, Maple Semiconductor

- 7A, 800V, RDS(on)typ. = 1.35Ω@VGS = 10 V - Low gate charge ( typical 38.4nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.